MoC掺杂钌基合金无籽晶阻挡层微结构及热稳定性研究

发布时间：2018-03-04 05:14

  本文选题：非晶RuMoC　切入点：无籽晶阻挡层　出处：《金属学报》2017年01期 　论文类型：期刊论文

【摘要】：采用磁控共溅射Ru和MoC靶制备非晶RuMoC薄膜。用四探针仪(FPPT)、X射线光电子能谱仪(XPS)、高分辨率透射电镜(HRTEM)和小角掠射X射线衍射仪(GIXRD)表征不同掺杂组分RuMoC薄膜和不同温度退火态Cu/RuMoC/p-SiOC∶H/Si多层膜系的方块电阻、成分和微观结构。结果表明,通过调控Ru膜中掺入Mo和C元素的含量能够实现RuMoC合金薄膜微结构设计及抑制膜体残余氧含量,且当MoC和Ru靶的溅射功率比为0.5时获得的RuMoCII薄膜综合性能最佳;500℃退火态RuMoC II薄膜中C-Mo和C-Ru化学键均未出现大量断裂,两者协同作用抑制了RuMoC薄膜再结晶和膜体氧含量升高,是Cu/RuMoCII/p-SiOC∶H/Si多层膜系具有高温热稳定性和优异电学性能的主要机制。
[Abstract]:Amorphous RuMoC thin films were prepared by magnetron co-sputtering of Ru and MoC targets. RuMoC films with different doped components and different temperatures were characterized by four-probe X-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (TEM) and small angle grazing X-ray diffraction (SG-GIXRD). Square Resistance of degree annealed Cu/RuMoC/p-SiOC:H/Si multilayer system, The results show that the microstructure design and residual oxygen content of RuMoC alloy films can be achieved by regulating the content of Mo and C in Ru films. Moreover, when the sputtering power ratio of MoC and Ru target is 0.5, the best comprehensive properties of RuMoCII films are obtained. The chemical bonds of C-Mo and C-Ru in RuMoCII films annealed at 500 鈩，

本文编号：1564270