Monte Carlo模拟波型结构的二次电子发射
发布时间：2025-02-06 19:21
二次电子信号的出射在科学技术领域都有着重要的价值,它作为扫描电子显微镜最常用的成像模式,能够反映电子束轰击范围内原位的材料以及形貌信息。二次电子极易受到实验条件以及材料变化的影响,由此可以利用其得到多种实验可观测的衬度,这使得二次电子在更多的领域得到应用,例如二次电子产额用于薄膜材料层厚的估计,环境扫描电子显微镜用于生物样品的观测等。二次电子的发展期待着可以成为更多领域的表征工具,实现这一目标依赖于二次电子产生模型更细致精确的描述。基于上述研究背景,关注二次电了实验测量的发展,本论文工作包括下几个部分:首先介绍了扫描电子显微镜的发展,二次电子成像的实验观测,概述了二次电子产生过程的理论描述以及数值模拟方法。(第1章)电子在固体中的传输和散射过程形成了各种电子显微镜和光谱分析技术的物理基础。因此,正确描述电子散射过程和模拟电子-固体相互作用的相应横截面是至关重要的。通过仔细分析,已经合理地描述了两种类型的电子散射过程:电子弹性散射通过使用莫特横截面来处理,并且电子非弹性散射被认为具有完全的宾夕法尼亚介电函数。在模拟的意义上,合理的随机抽样和模拟程序是必要的。我们合理地处理了所涉及的物理过程...
【文章页数】：83 页
【学位级别】：硕士
【文章目录】：
摘要
Abstract
Chapter 1 Introduction
1.1 Secondary Electrons in Scanning Electron Microscope
1.1.1 Basic Principle
1.1.2 Experimental Observation of Secondary Electron Generation:
1.2 Simulation of Secondary Electron Emission
1.2.1 Electron Solid Interaction Overview
1.2.2 Secondary Electrons(SE)
1.2.3 Backscattered Electrons(BSE)
1.2.4 Auger Electrons(AE)
1.2.5 Elastic Peak Electrons(PE)
Chapter 2 Monte Carlo Simulation of Secondary Electrons
2.1 Theoretical Basis for Secondary Electron Simulation
2.1.1 Elastic Scattering of Electrons
2.1.2 Inelastic Scattering of Electrons
2.1.3 Secondary Electron Cascade Process
2.2 Stepwise Method of Monte Carlo Simulation
2.2.1 Sampling Methods and Simulation Steps
Chapter 3 Geometric Representation
3.1 Finite Triangular Mesh
3.2 Space Subdivision Method
3.3 Construction of Structure in Gmsh
3.3.1 Geometry Module
3.3.2 Mesh Modules
3.3.3 Solver Module
3.3.4 Post Processing Module
3.4 Geometrical Representation of Wave-type Structure
3.5 Correlation Correction Algorithm
3.4.1 Boundary Correction
Chapter 4 Secondary Electron Emission from Wave-Type Structure
4.1 Numerical calculation of simulation method and parallel computing
4.2 Simulation of SEM Images
4.3 Determining Nano-Meter Line-Width in CD-SEM
4.4 SE Line Profile from Wave-Type Structure
Chapter 5 Summary and Prospects
References
Acknowledgement
Publications
本文编号：4030790
【文章页数】：83 页
【学位级别】：硕士
【文章目录】：
摘要
Abstract
Chapter 1 Introduction
1.1 Secondary Electrons in Scanning Electron Microscope
1.1.1 Basic Principle
1.1.2 Experimental Observation of Secondary Electron Generation:
1.2 Simulation of Secondary Electron Emission
1.2.1 Electron Solid Interaction Overview
1.2.2 Secondary Electrons(SE)
1.2.3 Backscattered Electrons(BSE)
1.2.4 Auger Electrons(AE)
1.2.5 Elastic Peak Electrons(PE)
Chapter 2 Monte Carlo Simulation of Secondary Electrons
2.1 Theoretical Basis for Secondary Electron Simulation
2.1.1 Elastic Scattering of Electrons
2.1.2 Inelastic Scattering of Electrons
2.1.3 Secondary Electron Cascade Process
2.2 Stepwise Method of Monte Carlo Simulation
2.2.1 Sampling Methods and Simulation Steps
Chapter 3 Geometric Representation
3.1 Finite Triangular Mesh
3.2 Space Subdivision Method
3.3 Construction of Structure in Gmsh
3.3.1 Geometry Module
3.3.2 Mesh Modules
3.3.3 Solver Module
3.3.4 Post Processing Module
3.4 Geometrical Representation of Wave-type Structure
3.5 Correlation Correction Algorithm
3.4.1 Boundary Correction
Chapter 4 Secondary Electron Emission from Wave-Type Structure
4.1 Numerical calculation of simulation method and parallel computing
4.2 Simulation of SEM Images
4.3 Determining Nano-Meter Line-Width in CD-SEM
4.4 SE Line Profile from Wave-Type Structure
Chapter 5 Summary and Prospects
References
Acknowledgement
Publications
本文编号：4030790
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