基于牺牲层技术的SOI压力敏感芯片研究
发布时间：2019-06-16 18:54
【摘要】：压力传感器是微机电系统领域的重要器件之一,通过分析对比国内外MEMS压力传感器的发展现状,设计了基于牺牲层技术的SOI压力敏感芯片。并针对汽车电子领域,对器件的结构及参数进行了优化。首先,由于SOI材料是制作高温压力传感器的良好材料,所以本文利用SOI技术完成压力传感器的设计。其次,基于压力敏感结构的有限元仿真结果,得知随着膜片尺寸的改变,过载能力会有显著的变化;过载能力的提升幅度和传感器的量程有关,量程越小,过载能力的提升幅度越大。结合敏感结构的尺寸参数与过载能力之间的关系,可在保证传感器灵敏度不变小的前提下,通过合理选择敏感结构尺寸提高过载能力。为使芯片体积小的同时电阻条所受的平均应力尽可能大,根据单晶硅灵敏度高,重复性和稳定性好的特点,设计单晶硅材料的应变电阻,通过计算确定了采用弯折型电阻,每1/2电阻的长宽都为8μm。本文所设计的传感器量程为0.5MPa,根据膜片尺寸和过载能力之间的关系,并结合电阻尺寸确定弹性膜片的长宽,弹性膜片的长度为200μm,宽度为100μm。经线性静力分析,确定了压阻的布局,经几何非线性和接触非线性分析,得到了膜片厚度的确定方法,并将膜厚设计为4μm。于是将腔体高度设计为0.3μm,最后采用1mA恒流源供电时,所设计的压力敏感芯片灵敏度为178.74mV/Mpa,满量程输出为89.37mV,过载能力为12.21MPa。本文对基于牺牲层技术的SOI压力敏感芯片进行了设计和优化,结构尺寸的设计和电阻布局等使传感器的各类参数均达到了预期的设计指标。此外,本文基于牺牲层技术和SOI技术,给出了压力敏感芯片的工艺流程,并对工艺中的关键技术进行了分析总结,最后给出了本文传感器的版图设计,为传感器的生产制造提供了设计方案。
[Abstract]:Pressure sensor is one of the important devices in the field of micro-electromechanical system. By analyzing and comparing the development status of MEMS pressure sensor at home and abroad, a SOI pressure sensor chip based on victim layer technology is designed. Aiming at the field of automobile electronics, the structure and parameters of the device are optimized. First of all, because SOI material is a good material for making high temperature pressure sensor, this paper uses SOI technology to complete the design of pressure sensor. Secondly, based on the finite element simulation results of pressure-sensitive structure, it is found that with the change of diaphragm size, the overload capacity will change significantly, and the increase range of overload capacity is related to the range of sensor, the smaller the range, the greater the increase range of overload capacity. Combined with the relationship between the size parameters of the sensitive structure and the overload capacity, the overload capacity can be improved by reasonably selecting the size of the sensitive structure on the premise of ensuring that the sensitivity of the sensor remains unchanged. In order to make the average stress of the resistance strip as large as possible when the chip size is small, according to the characteristics of high sensitivity, reproducibility and stability of single crystal silicon, the strain resistance of single crystal silicon material is designed. The bending resistance is determined by calculation, and the length and width of each 1 鈮，
本文编号：2500752
[Abstract]:Pressure sensor is one of the important devices in the field of micro-electromechanical system. By analyzing and comparing the development status of MEMS pressure sensor at home and abroad, a SOI pressure sensor chip based on victim layer technology is designed. Aiming at the field of automobile electronics, the structure and parameters of the device are optimized. First of all, because SOI material is a good material for making high temperature pressure sensor, this paper uses SOI technology to complete the design of pressure sensor. Secondly, based on the finite element simulation results of pressure-sensitive structure, it is found that with the change of diaphragm size, the overload capacity will change significantly, and the increase range of overload capacity is related to the range of sensor, the smaller the range, the greater the increase range of overload capacity. Combined with the relationship between the size parameters of the sensitive structure and the overload capacity, the overload capacity can be improved by reasonably selecting the size of the sensitive structure on the premise of ensuring that the sensitivity of the sensor remains unchanged. In order to make the average stress of the resistance strip as large as possible when the chip size is small, according to the characteristics of high sensitivity, reproducibility and stability of single crystal silicon, the strain resistance of single crystal silicon material is designed. The bending resistance is determined by calculation, and the length and width of each 1 鈮，
本文编号：2500752
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