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2351. The OBOR Initiative as An Element of China’s Overall Globali
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2352. A Report on the C-E Translation of Samsung Electronics Huizh
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2353. Effect of gate length on breakdown voltage in AlGaN/GaN high
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2354. A time and charge measurement board for muon tomography of h
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2355. A Report on the Translation of The Central Asian Economies i
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2356. Activity Modulation of Beclin-1/class Ⅲ PI3 Complex and MTOR
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2357. A Study on Application of Lexical Chunk Theory in English Wr
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2358. Design of an Electrically Written and Optically Read Non-vol
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2359. Electrical and dielectric characterization of Au/ZnO/n-Si de
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2360. Electrical and dielectric characterization of Au/ZnO/n-Si de
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