热氧化法制备二氧化钒薄膜及其相变性能研究

发布时间：2018-05-11 22:06

  本文选题：VO_2薄膜 + 热氧化　； 参考：《暨南大学》2011年硕士论文

【摘要】：本文以VO2薄膜为研究对象,采用磁控溅射法在普通玻璃、石英玻璃和Si02/Si(100)基片上沉积金属V膜,然后分别在空气及氧气气氛中用热氧化法探索制备具有相变性能的VO2薄膜的条件。用x-射线衍射仪(XRD)、原子力显微镜(AFM)、傅里叶变换红外光谱仪(FT-IR)、紫外-可见(UV-Vis)分光光度计、X-射线光电子能谱仪(XPS)和自组装电阻—温度测试装置等,分析氧化温度和不同基片对薄膜的微观结构、光学性能、电学性能、相变温度及其组分的影响。结果表明： 1.以普通玻璃为基片,沉积膜厚为300nm金属V膜,将其在空气中进行热氧化。在热氧化温度分别为400℃、450℃时,进行热氧化1h,得到具有相变性能的VO2薄膜。其中热氧化温度400℃获得的VO2薄膜,相变温度Tc约为50℃,热滞宽度ATs约为10℃,测试温度超过60℃时近红外光学透过率接近O。 2.以普通玻璃为基片,沉积不同厚度的金属V膜,将其在氧气气氛中进行热氧化。发现当金属V薄膜厚度较厚,热氧化形成具有相变性能的VO2薄膜时,热氧化温度范围较宽,且突变性能相对较好。 3.在石英玻璃和SiO2/Si(100)基片上,在金属V膜厚度、氧化气氛和氧化温度等相同条件下制备VO2薄膜,发现在石英玻璃基片上的样品具有相变性能,但在SiO2/Si(100)基片上的样品没有相变性能。其中以石英玻璃为基片,300nm金属V膜在空气中400℃热氧化具有良好的光学突变性能,相变温度Tc约为60℃,热滞宽度△Ts为16℃,近红外光学透过率突变高达50%,可见光的透过率接近40%。
[Abstract]:In this paper, metal V films were deposited on ordinary glass, quartz glass and Si 02 / Si 100 substrates by magnetron sputtering method. Then the conditions for preparing phase change VO2 thin films were investigated by thermal oxidation in air and oxygen atmosphere respectively. X ray diffractometer, atomic force microscope (AFM), Fourier transform infrared spectrometer (FTIR), UV-Vis-UV spectrometer, X- ray photoelectron spectrometer (XPSs) and self-assembled resistance-temperature measuring apparatus were used, such as X-ray diffractometer, atomic force microscope (AFM), Fourier transform infrared spectrometer (FTIR), UV-Vis-vis spectrophotometer, X-ray photoelectron spectrometer, etc. The effects of oxidation temperature and different substrates on the microstructure, optical properties, electrical properties, phase transition temperature and composition of the films were analyzed. The results show that: 1. Common glass was used as substrate and deposited film thickness was 300nm metal V film, which was thermally oxidized in air. VO2 thin films with phase transition properties were obtained by thermal oxidation at 400 鈩，

本文编号：1875806